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The COMb project focuses on developing ultra-high-speed transceivers by integrating Indium Phosphide and Lithium Niobate on a silicon nitride platform. This technology aims to enhance data transmission rates by utilizing mode-locked lasers and advanced modulation techniques, addressing the growing demand for data in op…
The constant hunger for data is straining optical links causing optical chip makers to struggle.
Transceivers have to work at everincreasing symbol rates.
On top they need to handle more complex data formats.
New materials have to be sought after as current modulator technologies in e.g. silicon are reaching their limit.
In the COMb project, we will leverage recently obtained results to make ultra-high-speed transceivers based on the multi-material integration of Indium Phosphide and Lithium Nio…
UNIVERSITEIT GENT
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