CORDIS Project
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This project explores the integration of ferroelectric HfO2-based films with high-performance III-V semiconductor materials to enhance electronic device capabilities. It aims to develop new technologies for reconfigurable electronics and improve performance in applications such as millimeter-wave devices and low-power…
The discovery of ferroelectric characteristics in annealed HfO2–based films opens a wide range of applications not only in memory and logic, but the results will enable new scientific directions for instance in reconfigurable electronics.
So far, ferroelectric films have been investigated in metal-insulator-metal structures suitable for back-end-of-line integration.
They have also been introduced onto Si and two-dimensional materials.
However, there is a gap of knowledge with lack of science and…
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