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The EDO project focuses on developing methods for controlled electronic doping in metal halide semiconductors. It aims to enhance the performance of these materials for micro and optoelectronic applications by addressing complex doping mechanisms and improving characterization techniques.
EDO will develop protocols for intentional, spatially controlled, and stable electronic doping in metal halide semiconductors.Electronic doping implies engineering of carrier density in semiconductors through the intentional introduction of a defect and it is necessary to achieve high performances in micro and optoelectronic technologies.
Unlike established semiconductors, which are typically covalent solids, those belonging to the class of soft materials, such as molecules and polymers, forming…
FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA
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