CORDIS Project
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This project focuses on developing gallium nitride ultraviolet radiation detectors on silicon substrates using a novel double oxide buffer layer. The aim is to enhance the quality of the gallium nitride layer for better optoelectronic device performance and to address challenges in integrating these materials.
This proposal between the researcher dr Adam Szyszka, the Polish fellow, and dr Thomas Schroeder, the scientist in charge of the German host IHP institute in Frankfurt (Oder) concern on investigation and fabrication of gallium nitride
planar UV radiation detectors grown on silicon substrate with use of novel double oxide buffer layer.Gallium nitride and its ternary alloys with aluminium and indium have been recognized as a very important technological material system for
fabricating optoelectron…
LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIK
IHP GMBH - LEIBNIZ INSTITUTE FOR HIGH PERFORMANCE MICROELECTRONICS
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