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The IBAHMA project focuses on developing a novel data storage method using ion-implantation to write nanoscale data into hydrogenated amorphous silicon carbide films. This approach aims to achieve ultra-high density and long-lasting archival data storage, addressing the growing need for safe data preservation.
Nowadays, safe archival data storage has become an urgent issue.
The IBAHMA project concerns a new approach to providing ultra-stable (>50 years), ultra-high density (>1Tbit/sq.in.) data storage for archival applications, using ion-implantation to write nanoscale data into hydrogenated amorphous silicon carbide (a-SiC:H) films.
Wide bandgap optical materials, such as a-SiC:H, when exposed to moderate ion doses develop useful optical contrast between regions of different irradiation levels.
Absor…
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