CORDIS Project
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This project focuses on a novel method for growing pure indium gallium nitride micro light-emitting diodes (μLEDs) using a unique lithography process. The technology aims to produce defect-free μLEDs that outperform current commercial options, paving the way for advanced display technologies.
Our method of growing pure InGaN μLEDs is completely unique.
We start with a layer of thin GaN on a substrate.
This layer has the same high defect density that other existing technologies struggle with.
Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process.
The mask contains tiny holes ca. 100 nm in diameter which become growth sites for intrinsically defect-free InGaN pyramids.
These pyramids are then reshaped into trunc…
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