CORDIS Project
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INTEGRASION focuses on improving the growth of III-nitride semiconductors on two-dimensional materials to enhance photodetection capabilities across various wavelengths. The project aims to understand the growth processes and develop advanced optoelectronic devices.
III-nitride semiconductors (GaN/AlGaN) are strategic materials for photodetection in a broad spectral range from deep ultraviolet to far infrared.
These domains can be addressed thanks to interband and intersubband transitions respectively, which cover wavelengths inaccessible to standard III-V semiconductors.
Heterogeneous integration of III-N nanowires (NWs) on 2D materials at the same time opens new technological opportunities for advanced optoelectronics and presents fundamental interest to…
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