CORDIS Project
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This project focuses on modeling dopant profiles in materials for microelectronics and fusion applications. It uses advanced simulation techniques to optimize the performance of silicon-based transistors and materials for nuclear reactors under extreme conditions.
In order to continue with the size reduction of transistors it is necessary to use complex implantation conditions such as amorphizing implants.
Models predicting the resulting dopant profile reduce the number of experiments necessary to design the best process to obtain the desired properties.
In the case of development of materials for fusion applications, models are crucial since, as of today, there are no experimental facilities to reproduce the same conditions that the materials will withst…
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