CORDIS Project
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This project investigates the effects of mechanical stress on non-silicon devices, particularly two-dimensional materials and indium gallium zinc oxide-based transistors. It integrates mechanical and electrical characterization to develop predictive models for device behavior under stress and heating conditions.
This project aims to imply the co-integrated externally applied Mechanical Stress (MS) up to GPa levels by nanoindentation with electrical characterization setup and on-chip heating capability to study the properties of Non-silicon Devices
(ND), specifically two-dimensional Transition metal dichalcogenides (2D TMD) and indium gallium zinc oxide (IGZO) based devices to explore the multitudinous electrical, physical, and reliability characteristics and creating
accurately-calibrated models to pred…
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
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