CORDIS Project
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This project focuses on developing and optimizing self-forming diffusion barriers for advanced semiconductor device interconnects. By utilizing advanced electron beam techniques, it aims to enhance the understanding of barrier formation at the atomic level, addressing challenges posed by traditional copper interconnect…
At present, copper is the material of choice in the current processing technology for advanced semiconductor devices interconnects.
However, the high diffusion rate between copper and silicon or silicon oxides requires the development of physical barriers to prevent interdiffusion across the interfaces.
The thickness of the currently used barriers makes them an unviable option as the semiconductor industry moves from the 45 nm node to 32 nm and beyond, and alternative approaches are required.
So…
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