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OPTOHYB investigates carrier localization in halide perovskites combined with gallium arsenide to improve photodetection. The project aims to understand and control the optoelectronic properties of this hybrid structure, enhancing device performance through experimental techniques like photoluminescence.
OPTOHYB focuses on studying the carrier localization (CL) in a new hybrid structure namely halide perovskites/GaAs for photodetection application.
Understanding the CL phenomenon in this hybrid structure could provide insights towards enhancing/controlling the optoelectronic properties.
The idea consists of detecting and controlling the CL in the hybrid heterojunction and orient it towards photodetection devices.
The phenomenon can be generated, either, randomly by strain, composition, size, and…
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