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OSE-Ferroelectrics investigates the properties of ferroelectric materials to improve energy efficiency in electronic devices. The project focuses on understanding and overcoming size effects in ferroelectric thin films to enhance their performance in applications like memory devices and transistors.
The rapid increase in power consumption for data collection, storage and processing drives a global interest in finding new energy-efficient device paradigms.
Ferroelectric materials can provide energy-efficient solutions for targeted applications such as transistors based on polarization-induced negative capacitance or memory devices based on polarization-controlled resistive switching.
The crucial properties of ferroelectric-based heterostructures in electronic applications are remanent polari…
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