CORDIS Project
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This project investigates the switching mechanisms in phase change memory devices made from GeSbTe compounds. It aims to understand the stability of switching parameters and the effects of temperature on the device's performance, contributing to advancements in memory technology.
In phase change memory devices based on amorphous semiconductor GeSbTe compounds, the switching is achieved through application of current pulses with various pulse widths and trailing edges.
When the device is in the low resistance polycrystalline state (set-state) the application of a high amplitude current pulse can increase the local temperature above the melting point and if the trailing edge is short enough the molten state is quenched into an amorphous phase (high resistance-reset state)…
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