CORDIS Project
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This project explores new transistor designs using III-V materials to improve performance and reduce power consumption in future digital applications. It focuses on assessing the feasibility of advanced MOSFETs and their reliability under various conditions.
The current bulk transistor technology will not deliver an ITRS prescribed on-current at and beyond the 22 nm technology generation. A radical change in the device architecture will occur to sustain the device performance and reduce power dissipation.
For this reason, Intel has recently announced that they will use a non-planar, 3D Tri-Gate architecture in mass production for the 22 nm technology.In this highly interdisciplinary proposal, we will analyse the feasibility of two novel MOSFETs base…
SWANSEA UNIVERSITY
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