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This project focuses on growing and analyzing magnesium-doped indium-gallium-nitride nanocolumns on silicon substrates to achieve p-type conductivity. The goal is to optimize growth conditions and characterize the resulting materials for potential use in advanced solar cells.
We propose a 24-months-project, working on the growth and characterization of Mg doped InxGa1-xN Nanocolumns (NCs) on a Si (100) substrate with a GaN buffer layer, aiming to achieve the p-type conductivity in In0.5Ga0.5N NCs.
In the previous study, selective area growth (SAG) of In(Ga)N NCs on top of a GaN buffered Si substrate by using plasma-assisted molecular beam epitaxy (PAMBE) has been achieved.
Subsequently, the major challenges for fabricating p-In0.5Ga0.5N/n-In0.5Ga0.5N/p-Si/n-Si stack…
UNIVERSIDAD POLITECNICA DE MADRID
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