CORDIS Project
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This project investigates advanced complementary metal-oxide-semiconductor technology using germanium substrates. It aims to improve the performance of germanium n-channel metal-oxide-semiconductor field-effect transistors by exploring alternative gate dielectrics based on rare earth oxides.
The training activities will cover the area of advanced CMOS with special attention on suitable gate dielectrics for high carrier mobility germanium substrates.
Since strained Si, especially for nMOS, is running out of steam, high mobility channels could be an alternative option for future 11 nm node and beyond. A Ge CMOS is preferable due to processing simplicity in a Si-compatible flow, however it has remained elusive for several years due to the underperformance of nMOS transistors.
During th…
NATIONAL CENTER FOR SCIENTIFIC RESEARCH ""DEMOKRITOS""""
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