CORDIS Project
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This project investigates a novel memory device in spintronics that utilizes spin-orbit effects for data storage. It aims to enhance the reliability and efficiency of magnetic memory technologies by developing a new writing scheme that circumvents existing limitations.
Current research in spintronics focuses on a new type of memory device where the information is stored in the resistance state of magnetic tunnel junctions.
This device generates high expectations, since it combines most qualities encountered separately in existing random access memories, among which one of the key features is the non-volatility.
The present writing scheme of MRAMs, based on Ampere’s law is not robust against downscaling.
The solution under investigation, based on the spin-trans…
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
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