CORDIS Project
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This project investigates the use of high-k dielectric materials, particularly hafnium oxide, in metal-oxide-semiconductor devices to improve performance and reduce power loss. It also explores high-mobility materials like germanium for future transistor technology.
For several decades, silicon semiconductor devices have been scaled down to achieve higher device density and performance.
As a result, alternative gate oxides with high dielectric constant (high-k), which can prevent power dissipation resulting from direct quantum mechanical tunneling across the dielectric layer, will replace silicon dioxide which has been used as a gate dielectric in metal-oxide-semiconductor field effect transistors.
Deposited hafnium oxide-based insulators are currently the…
UNIVERSITAT AUTONOMA DE BARCELONA
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