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The TETTRA project focuses on creating and analyzing III-V nanowire tunnel field-effect transistors for low-power computing applications. By utilizing advanced semiconductor materials, the project aims to enhance the performance and efficiency of future electronic devices.
Tunnel transistors are currently considered promising candidates for future low-power high performance information processing applications.
The proposed project TETTRA – Towards Enhanced III-V Tunnel TRAnsistors – is dedicated to the fabrication and characterization of III-V nanowire tunnel field-effect transistors (FETs). III-V semiconductor heterostructure nanowires, grown on Si substrates by means of the selective-area-epitaxy method, serve as basis for the tunnel FETs.
The project concentrat…
IBM RESEARCH GMBH
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